Thermoelectric materials are generators of clean and silent energy. The energy generated by them is renewable also. By using thermoelectric materials, waste heat can be converted into electricity, which in turn can increase the efficiency of the apparatus. Indium Selenides and Aluminium Antimonide are widely studied for their thermoelectric behaviour as they can be tuned by different ways. Ion beam mixing is one of the new techniques for fabrication of thin films used recently for thermoelectric thin films. These ion beam synthesized thermoelectric films were shown to be nanostructured having higher Seebeck coefficient. In the present work thin films of Indium over Selenium and Antimony over Aluminium were deposited successively on the Silicon and quartz substrates respectively by electron beam evaporation method under 2×10^-5 mbar pressure at room temperature. The In/Se bilayers were irradiated with ion beam of high energy: 100 MeV Ag. And In/Se as well as Sb/Al bilayers were irradiated with low energy ion beam of Kr at 350 Kev. These set of samples were then characterized by XRD and Rutherford backscattering spectrometry (RBS). The XRD study reveals Indium Selenide and Aluminium Antimonide phase formation in Pristine samples. SEM of each sample were carried out along with Pristine samples. Other studies related to the thermoelectric properties of the Indium Selenide, Aluminium Antimonide like electrical resistivity, thermoelectric power and Hall measurements were also carried out.